Ga2O3 γκοφρέτα
(13)Sn Doping Ga2O3 Wafer Μονόκρυσταλλο Υπόστρωμα 10x10mm2
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Δείτε περισσότερα
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Ενιαίο γυαλισμένο πλευρά υπόστρωμα ενιαίου κρυστάλλου γκοφρετών Ga2O3
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... Δείτε περισσότερα
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ενιαία στίλβωση υποστρωμάτων ενιαίου κρυστάλλου 0.6mm 0.8mm Ga2O3
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... Δείτε περισσότερα
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JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Grade Product Single Polishing
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... Δείτε περισσότερα
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Ra 0,3 nm Ga2O3 Μονόκρυσταλλο Επιταξιακό Γκοφρέτα 2 ίντσες 4 ίντσες
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:Ga2O3 epitaxial wafer 2 Inch, Single Crystal Substrate 4 Inch, single crystal epitaxial wafer
Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filt... Δείτε περισσότερα
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Μονόπλευρο στιλβωμένο υπόστρωμα Ga2O3 Πάχος μονού κρυστάλλου 0,6mm 0,8mm
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:side polished Ga2O3 Substrate, 0.8mm Gallium Oxide substrate, Ga2O3 Substrate Single Crystal
Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.5nm Resistance 2.00E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor m... Δείτε περισσότερα
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FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:Ga2O3 Wafer 0.6mm, single crystal substrate 0.8mm, Ga2O3 Wafer 0.8mm
FWHM Δείτε περισσότερα
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Ga2O3 Fe Doped Wafer Μονόκρυσταλλο Υπόστρωμα 10x10mm2 Ελεύθερη Όρθια
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:Ga2O3 Fe Doped Wafer, Single crystal Ga2O3 substrate, Fe Doped Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Ga2O3 has a long history and the phase equilibria of the Al2O3-Ga2O3-... Δείτε περισσότερα
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Semiconductor Single Crystal Gallium Oxide Substrate UID Doping
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:Single Crystal Gallium Oxide substrate, semiconductor wafer ISO, Gallium Oxide substrate UID Doping
Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM Δείτε περισσότερα
➤ Επίσκεψη Δικτυακός τόπος
JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Resistance Δείτε περισσότερα
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JDCD04-001-003 10x10mm2 100(Off 6°) Fe-Doped Free-Standing Ga2O3 Single Crystal Substrate Grade Product Single Polishing
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤5nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Power density is greatly improved in gallium nitride devices compar... Δείτε περισσότερα
➤ Επίσκεψη Δικτυακός τόπος
10x15mm2 UID Doped Free Standing Ga2O3 Wafer Single Polishing
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:10x15mm2 Ga2O3 Wafer, UID Doped Ga2O3 Substrate, Ga2O3 Wafer Single Polishing
JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic ... Δείτε περισσότερα
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γκοφρέτα 10x15mm 10x10mm Ga2O3 υπόστρωμα ενιαίου κρυστάλλου
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Μάρκα: GaNova
Υψηλό Φως:10x10mm Ga2O3 Wafer, 10x15mm single crystal wafer, Ga2O3 Wafer 10x15mm
10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters With increased energy efficiency, smaller req... Δείτε περισσότερα
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