Κρύσταλλο καρβιδίου του πυριτίου
(12)
100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Υψηλό Φως:Silicon Carbide Crystal P Grade, single crystal silicon carbide, Silicon Carbide Crystal 4H
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabricati... Δείτε περισσότερα
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JDZJ01-001-002 SiC Ingot Crystal 4" D Grade
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC. SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperatu... Δείτε περισσότερα
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JDZJ01-001-006 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
SiC seed crystal S grade 6" S grade φ153±0.5mm SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such ... Δείτε περισσότερα
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JDZJ01-001-008 4&6 ιντσών SiC Seed Crystal
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
JDZJ01-001-008 4&6inch SiC Seed crystal The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high- power/high-frequency electronic devices. SiC can withstand a voltage gradient (o... Δείτε περισσότερα
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JDZJ01-001-007 Silicon Carbide Seed Crystal
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
JDZJ01-001-007 Silicon Carbide Seed Crystal Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabr... Δείτε περισσότερα
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JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
SiC seed crystal S grade 6" S grade φ153±0.5mm SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at e... Δείτε περισσότερα
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JDZJ01-001-004 SiC Ingot Crystal 6" βαθμού P
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has been an important material for sandpapers, grinding wheels, and cutting tools. SiC can b... Δείτε περισσότερα
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Αντίσταση κρυστάλλου καρβιδίου του πυριτίου 4" βαθμού P 0,015ohm.cm έως 0,028ohm.cm
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Υψηλό Φως:P Grade Silicon Carbide Crystal, crystalline silicon carbide 0.028ohm.Cm, 4" Silicon Carbide Crystal
4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any ... Δείτε περισσότερα
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4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Υψηλό Φως:single crystal silicon carbide 4", N type crystalline silicon carbide, single crystal silicon carbide Si face
JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high- power/hig... Δείτε περισσότερα
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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Υψηλό Φως:100.0mm Silicon Carbide Crystal, single crystal sic 4", Silicon Carbide Crystal 18.0mm
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows ... Δείτε περισσότερα
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0,015ohm.cm έως 0,028ohm.cm κρύσταλλο καρβιδίου πυριτίου Τύπος N
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Υψηλό Φως:0.015ohm.cm Silicon Carbide Crystal, N Type sic crystal, Silicon Carbide Crystal 32.5mm
0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve extremely low levels of impurities. It is used to measure the impurities within SiC C... Δείτε περισσότερα
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Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm
Τιμή: Negotiable
MOQ: Negotiable
Ωρα παράδοσης: 3-4 week days
Υψηλό Φως:32.5mm Silicon Carbide Crystal, SiC Seed Crystal 100.0mm, Silicon Carbide Crystal 4"
Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric... Δείτε περισσότερα
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